Temp.-controlled degasification of deionized water in extremely ultrasonic cleaned semiconductor chip

Application Number: 00108988
Application Date: 2000.05.25
Publication Number: 1276271
Publication Date: 2000.12.13
Priority Information: 1999/5/25 US 09/318156
International: B08B3/10;B08B3/12;B08B7/04;C02F1/00;C23G1/00;H01L21/304;H01L21/306
Applicant(s) Name: Infineon Technology North America Corp.
Inventor(s) Name: S. Kudlcar;D. Las
Patent Agency Code: 72001
Patent Agent: liang yong
Abstract A system is provided to prepare deionized water having a 100% saturated concentration of a gas, e.g., nitrogen, at a hot temperature, e.g., 50-85 DEG C., and an attendant pressure, e.g., atmospheric pressure, to clean a semiconductor wafer, e.g., of silicon. The gas concentration of deionized water having a predetermined concentration of the gas at a cold temperature, e.g., 15-30 DEG C., is adjusted in a degassifier chamber having a vacuum pump and a pressure sensor, to provide an under-saturated concentration of the gas at the cold temperature corresponding to the saturated concentration thereof at the hot temperature and attendant pressure. The adjusted gas concentration water is then heated in a heating vessel having a heater and a temperature sensor, to the hot temperature to form a hot bath having such saturated gas concentration to clean the wafer in a cleaning tank.