Transistor with high electron mobility and its preparing process

Application Number: 00109356
Application Date: 2000.05.31
Publication Number: 1326229
Publication Date: 2001.12.12
Priority Information:
International: H01L21/335;H01L29/772;H01L29/812
Applicant(s) Name: Inst of Semiconductors, Chinese Academy of Sciences
Inventor(s) Name: Pan Zhong
Patent Agency Code: 00000
Patent Agent:
Abstract A transistor with high electron mobility is composed of GaAs substrate, buffer layer, electronic channel layer (GaInNAs), space layer, potential barrier layer, cap layers, source and drain electrodes on the cap layers and grid electrode on the potential barrier layer, which are sequentially arranged from bottom to top.