Twin film field effect transistors and use thereof


Application Number: 00108220
Application Date: 2000.04.30
Publication Number: 1279517
Publication Date: 2001.01.10
Priority Information: 1999/5/18 US 09/314,436
International: H01L21/28;H01L21/336;H01L27/00;H01L29/786
Applicant(s) Name: IBM Corp.
Address:
Inventor(s) Name: T. Doder;Huang Wei;C. C. Choi
Patent Agency Code: 11038
Patent Agent: du rixin
Abstract A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive channel layer is formed on the insulating layer and carries current between a source and a drain. The conductive channel layer is adapted to provide a dual channel. The dual channel includes both a p-channel and an n-channel wherein one of the p-channel and the n-channel are selectively enabled responsive to the input voltage polarity. A method for forming the device and applications are also disclosed and claimed.