Capacitor of semiconductor storage element and its producing method


Application Number: 00124026
Application Date: 2000.06.29
Publication Number: 1280390
Publication Date: 2001.01.17
Priority Information: 1999/6/29 KR 25465/99
International: H01L21/70;H01L27/04;H01L27/10
Applicant(s) Name: Hyundai Electronic Industrial Co., Ltd.
Address:
Inventor(s) Name: Lee Kyvi-Chong;Kim Tong-Jon
Patent Agency Code: 11105
Patent Agent: yang wu
Abstract A capacitor for semiconductor memory device and method of manufacturing the same, which can increase the storage capacitance and prevent the current leakage. The capacitor for semiconductor memory device according to the present invention comprises: a lower electrode; a dielectric layer, formed on the lower electrode; and, an upper electrode, formed on the upper electrode of the dielectric layer; in which, the dielectric layer is a crystallized TaxOyNz layer that the sum of x, y, z in the crystallized TaxOyNz layer equals to 1 where y is from 0.3 to 0.5 and z is from 0.1 to 0.3.