Application Number: 00102961
Application Date: 2000.03.10
Publication Number: 1267085
Publication Date: 2000.09.20
Priority Information: 1999/3/10 JP 063670/1999
International: B24B1/00;H01L21/304
Applicant(s) Name: K. K. Hidaira Toyama
Address:
Inventor(s) Name: Ohazama Kikuo;Murai Shiro;Kaga Muneaki
Patent Agency Code: 11021
Patent Agent: liu xiaofeng
Abstract Chamfering C1 is performed along the edge of a notch groove by the center 01 of a grindstone 5. Change to grindstone center 02 is performed to perform chamfering C2 along the edge of the notch groove. Similarly, chamfering C3, C4 and C5 are formed. A grindstone having a large diameter can be employed. Only control of the diameter of the grindstone is required to maintain the shape. Satisfactory surface roughness can be realized. It is possible to improve surface roughness of a notch groove of a wafer and realize high efficiency.