Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor

Application Number  00129590 Application Date  2000.10.08
Publication Number  1347138 Publication Date  2002.05.01
Priority Information    
Applicant(s) Name  Inst of Semiconductor, Chinese Academy of Sciences  
Inventor(s) Name  Chen Nuofu;Yang Junling;He Hongjia  
Patent Agency Code  11021 Patent Agent  tang baobeng
AbstractA heterogenous liquid-phase epitaxial growth process of magnetic semiconductor or magnetic semiconductor/semiconductor includes such steps as using GaAs monocrystal as substrate, preparing growth container from graphite or quartz, loading Ga, Mn and GaAs proportionally in said container, fully dissolving and mixing in epitaxial furnace, and over-cold epitaxial growth at 573-1073 deg.K.