Method for making semiconductor device

Application Number: 00102854
Application Date: 2000.03.03
Publication Number: 1266282
Publication Date: 2000.09.13
Priority Information: 1999/3/4 JP 57126/1999
International: H01L21/82
Applicant(s) Name: NEC Corp.
Inventor(s) Name: Io Hideji
Patent Agency Code: 11219
Patent Agent: mu dejun
Abstract The invention provides a method for making semiconductor device. A CMOS transistor and a memory cell transistor are formed without causing deterioration to reliability and performance. A step of covering a memory cell region with an HTO film and forming sidewalls in the CMOS transistor while exposing a diffusion region of the CMOS transistor, a step of depositing titanium, and a step of reacting the diffusion region with the titanium, forming a titanium silicide in the CMOS, transistor source and drain are provided.