Method for producing semiconductor substrate material and solar cells

Application Number: 00122589
Application Date: 2000.06.16
Publication Number: 1278656
Publication Date: 2001.01.03
Priority Information: 1999/6/17 JP 171135/1999
International: H01L21/02;H01L31/04;H01L31/18
Applicant(s) Name: Canon Co., Ltd.
Address:
Inventor(s) Name: Iwasaki Yukiko;Komehara Takao;Nishita Sakaji
Patent Agency Code: 11038
Patent Agent: wang sibeng
Abstract When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.