Photoelectric sensor


Application Number: 00124187
Application Date: 2000.08.15
Publication Number: 1289929
Publication Date: 2001.04.04
Priority Information: 1993/7/7 JP 167679/93; 1994/1/20 JP 4531/94
International: G01R15/24
Applicant(s) Name: Tokin Corp.
Address:
Inventor(s) Name: Togano Chiichi;Tanade Takanobu
Patent Agency Code: 72001
Patent Agent: fu kang
Abstract An optical electric field sensor is constituted of optical parts (2-4 and 11-13) including an optical crystal and it is used to measure the intensity of a naturally or forcibly generated electric field by utilizing such a phenomenon that the intensity, phase, or polarization direction of light changes when the light is passed through the electric field. The optical parts are arranged and enclosed in a package (7) formed of at least one kind of material selected from such a glass material as quartz, ceramics, such a plastic material as antistatic vinyl chloride. When the main surface section of the package (7) is satinized, a greater effect can be obtained. The optical crystal having an electrooptic effect is enclosed in an heat-insulating material. In addition, a conductive resin is applied to the entire surface of the substrate of the optical crystal and a silicon resin is applied between modulating electrodes.