Plasma Chemical vapor deposition filing method and equipment


Application Number  00128293 Application Date  2000.12.15
Publication Number  1308147 Publication Date  2001.08.15
Priority Information    
International
Classification
 C23C16/50;C23C16/503;C23C16/513  
Applicant(s) Name  Beijing University of Aeronautics &. Astronautics  
Address    
Inventor(s) Name  Tao Ye  
Patent Agency Code  11226 Patent Agent  chen dunyao
AbstractThe present invention relates to a plasma gas deposition film-plating method and its equipment, including: traditional furnace body which can be evacuated and a device capable of introducing the vaporized metal chloride and other working gas into the described evacuated fumace body. After the workpiece to be plated placed in the evacuated furnace body is connected with electrode cathode and the furnace body is connected with anode, said anode is grounded, and the negative voltage is applied to cathode. The voltage is raised to a certain extent, so that a glow plasma field is produced between cathode and anode. An arc-spray gun capable of spraying plasma torch is placed in the furnace body, and said plasma torch can enter directly into glow plasma field.