Quasi-one dimension fibre semi-conductor with linear carbon structure and its producing method and apparatus, and heating element using the same fibre semi-conductor


Application Number  00129048 Application Date  2000.08.22
Publication Number  1287466 Publication Date  2001.03.14
Priority Information   1999/8/23 KR 35041/1999; 2000/6/28 KR 36021/2000  
International
Classification
 H05B3/14  
Applicant(s) Name  KOROS Co., Ltd.  
Address    
Inventor(s) Name  Kwon Sanghevi;Alexander. Dmitlijevich;Tsoiy  
Patent Agency Code  72002 Patent Agent  han hong
AbstractThe present invention relates to quasi-one dimension fibre semiconductor with linear carbon structure and its producing method and apparatus, and heating element using the same fibre semi-conductor. The quasi-one dimension fibre semiconductor with linear carbon structure is characterized in that acceptor interstitial impurity, such as phosphate radical(PO4<-3>), is added to the carbon fibre. The method for manufacturing quasi-one dimension fibre semiconductor with linear carbon structure comprises the steps of: treating the carbon ribbon with electrochemical treatment method; rinsing the worked carbon ribbon; drying the rinsed carbon ribbon; saturating the fried carbon ribbon using with a silicone solution; forming a linear structure saturated carbon ribbon.