Semiconductor device and semoconductor base board and their manufacture

Application Number  00129584 Application Date  2000.10.08
Publication Number  1295365 Publication Date  2001.05.16
Priority Information   1999/10/6 JP 285582/1999  
Applicant(s) Name  Matsushita Electric Corp.  
Inventor(s) Name  Nakamura Naotsugu;Ishida Masako;Orita Kenko  
Patent Agency Code  11021 Patent Agent  wang huimin
AbstractA semiconductor device is provided to reduce defects. This semiconductor device comprises a substrate(102) which has on its surface a hollow(104) in a closed shape, when viewed from a substrate normal direction, and a semiconductor layer(103) formed on the surface of the substrate(102) by crystal growth at least from internal surface(105,106,107) of the hollow(104). Providing a semiconductor device which has further reduced lattice defects.