Silicon complementary metal oxide semiconductor body contact on insulator formed by grating

Application Number: 00120329
Application Date: 2000.07.12
Publication Number: 1280388
Publication Date: 2001.01.17
Priority Information: 1999/7/13 US 09/351,647
International: H01L21/786;H01L21/84
Applicant(s) Name: IBM Co.
Address:
Inventor(s) Name: Michael J. Hagruf;Jack A. Mangriman
Patent Agency Code: 11038
Patent Agent: wang yonggang
Abstract A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and provides a body contact under each gate conductor segment over the width of the device. A plurality of body contacts may be distributed across the length of the gate conductor. This results in a relatively short path for holes leaving the body to traverse and allows accumulated charge to be removed from the body region under the gate. The structure provides for stable and efficient body-contact operation for SOI MOSFETS of any width operating at high speeds.