Tag Archives: epitaxial

Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor

Application Number  00129590 Application Date  2000.10.08 Publication Number  1347138 Publication Date  2002.05.01 Priority Information     International Classification  C30B19/00;H01L21/208;H01L43/12   Applicant(s) Name  Inst of Semiconductor, Chinese Academy of Sciences   Address     Inventor(s) Name  Chen Nuofu;Yang Junling;He Hongjia   Patent Agency Code  11021 Patent Agent  tang baobeng AbstractA heterogenous liquid-phase epitaxial growth process of… Read More »

Method of manufacturing epitaxial LED chip

Application Number: 00117643Application Date: 2000.05.25Publication Number: 1307356Publication Date: 2001.08.08Priority Information: 2000/2/3 US 09/497,316International: H01L21/20;H01L21/205;H01L21/24;H01L21/30;H01L21/324;H01L33/00Applicant(s) Name: Guolian Opto-Electronic Science &. Technology Co., Ltd.Address: Inventor(s) Name: Cai Zongliang;Zhang ZhongyingPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract The manufacture of P-type compound semiconductor material with low resistivity includes: forming a P-type doped compound semiconductor layer on a substrate by… Read More »

Epitaxial growth chip used for infrared emitting diode and infrared emitting diode

Application Number: 00118294Application Date: 2000.04.27Publication Number: 1273438Publication Date: 2000.11.15Priority Information: 1999/4/27 JP 119689/1999; 1999/9/21 JP 266483/1999International: H01L33/00Applicant(s) Name: Showa Denko K. K.Address: Inventor(s) Name: Yoshinage Atsushi;Yamamoto JunichiPatent Agency Code: 11038Patent Agent: wang yonggangAbstract The present invention provides an epitaxial wafer comprising, on a p-type GaAs single-crystal substrate, a first p-type layer; a p-type cladding layer;… Read More »

Epitaxial chip used for infrared light-emitting component, and light-emitting component using said chip

Application Number: 00118399Application Date: 2000.06.16Publication Number: 1278111Publication Date: 2000.12.27Priority Information: 1999/6/18 JP 172482/1999; 1999/9/21 JP 266483/1999International: H01L33/00;H01S5/30Applicant(s) Name: Showa Denko K. K.Address: Inventor(s) Name: Yoshinaga Atsushi;Yamamoto Junichi;Yamazaki AkihiroPatent Agency Code: 11038Patent Agent: wang yonggangAbstract The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type… Read More »

Equipment used for solving equation system on finite field and equipment used for inverse operation of epitaxial field element

Application Number: 00120117Application Date: 2000.07.17Publication Number: 1281203Publication Date: 2001.01.24Priority Information: 2000/5/12 JP 140886/00; 1999/7/16 JP 203055/99International: G09C5/00Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.Address: Inventor(s) Name: Nunota HiroichiPatent Agency Code: 72001Patent Agent: liang yongAbstract An equation transforming unit triangular transforms a matrix M and a vector v to generate a matrix M' and a vector v'… Read More »

Epitaxial growth method of semiconductor on substrate with high mismatched lattices

Application Number: 00120258Application Date: 2000.07.14Publication Number: 1281247Publication Date: 2001.01.24Priority Information: 1999/7/14 GB 9916549.0International: C30B23/02;C30B25/02;H01L21/20Applicant(s) Name: Huashang Photoelectric Co LtdAddress: Inventor(s) Name: Wang Wangnan;U. G. Schlette;U. T. LebannyPatent Agency Code: 11038Patent Agent: du rixinAbstract A solid-liquid phase-changing transition layer is used to compensate the height dismatch of crystal lattice substrate and semiconductor, so the non-stress epitaxial… Read More »

Algalnp series luminous diode and epitaxial wafer used for making said diode

Application Number: 00108101Application Date: 2000.04.27Publication Number: 1271965Publication Date: 2000.11.01Priority Information: 1999/4/27 JP 120121/99; 1999/6/25 JP 180539/99International: H01L33/00Applicant(s) Name: Hitachi Cable Co., Ltd.Address: Inventor(s) Name: Shibata Kenji;Shibata Masachi;Imano TaichiroPatent Agency Code: 72001Patent Agent: liang yongAbstract A high potential barrier is prevented from being formed on a hetero-boundary surface between a p-type AlGaInP cladding layer and a… Read More »

Structure of double deep oxide layer in epitaxial silicon process on insulator base

Application Number: 00106468Application Date: 2000.04.11Publication Number: 1272689Publication Date: 2000.11.08Priority Information: 1999/4/30 US 09/303277International: H01L21/70;H01L21/76;H01L27/12Applicant(s) Name: International Business Machine Corp.Address: Inventor(s) Name: J. S. Brown;A. Brient;R. J. Geger Jr.Patent Agency Code: 72001Patent Agent: liang yongAbstract A semiconductor structure, and associated method of fabrication, comprising a substrate having a continuous buried oxide layer and having a plurality… Read More »

Optimum design method for DH-Ga1-XAlx-As LED liquid-phase epitaxial material structure

Application Number: 00103908Application Date: 2000.02.29Publication Number: 1311536Publication Date: 2001.09.05Priority Information: International: H01L33/00;H01S5/00;H05B33/00Applicant(s) Name: Chuangchun Inst. of Optics and Fine Mechanics and Physics, Chinese Academy of ScAddress: Inventor(s) Name: Yuan Jinshan;Zhang Fuwen;Li XiangwenPatent Agency Code: 22001Patent Agent: liang airongAbstract An optimized design for the structure of liquid phase epiraxial material structure with DH-Ca1-xAlxAs LED is designed… Read More »

Process for recovering high purity metal gallium from liquid phase epitaxial waste liquid

Application Number: 00103907Application Date: 2000.02.29Publication Number: 1311343Publication Date: 2001.09.05Priority Information: International: C22B58/00Applicant(s) Name: Changchun Inst. of Optics and Fine Mechanics and Physics, Chinese Academy of SciAddress: Inventor(s) Name: Yuan Jinshan;Zhang Fuwen;Li XiangwenPatent Agency Code: 22001Patent Agent: liang airongAbstract To recover high purity metal gallium from the waste fluid phase epitaxial is to add the floating… Read More »

Process for generating epitaxial layer of III-family nitrode on monocrystal substrate and its products and equipment

Application Number: 00103786Application Date: 2000.03.10Publication Number: 1313412Publication Date: 2001.09.19Priority Information: International: C23C16/34;C30B25/02Applicant(s) Name: Guangjia Photoelectric Co LtdAddress: Inventor(s) Name: Gong ZhirongPatent Agency Code: 31100Patent Agent: zhang zhengquanAbstract A method for generating the epitaxial layer of III-family nitride on monocrystal substrate features use of an EGAS technique, Epitaxial growth by alternate supply of reactants, that is,… Read More »