Tag Archives: refraction-metal-silicide

Method for forming refraction-metal-silicide layer of semi-conductor device

Application Number: 00108279Application Date: 2000.04.28Publication Number: 1272686Publication Date: 2000.11.08Priority Information: 1999/4/28 JP 121410/1999International: H01L21/283;H01L21/3205;H01L21/336;H01L21/8238Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Hamanaka Nobuaki;Iue Ken;Sangi IkuPatent Agency Code: 11021Patent Agent: li yueAbstract A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts… Read More »