Open equipotential semiconductor electro-refrigerating component element and assembly

Application Number: 00121472Application Date: 2000.07.25Publication Number: 1335472Publication Date: 2002.02.13Priority Information: International: F25B21/04;H01L35/28Applicant(s) Name: Shi LeimingAddress: Inventor(s) Name: Shi LeimingPatent Agency Code: 00000Patent Agent: Abstract The present invention is one open equipotential semiconductor electrorefrigerating module comprising single-layer or multiple-layer semiconductor material. By means of plastic sealing and connection with special line of refrigerating electric piles, efficient Read more

Method for forming self-aligning contact structure in semiconductor IC device

Application Number: 00122482Application Date: 2000.08.03Publication Number: 1319886Publication Date: 2001.10.31Priority Information: 2000/2/3 KR 05358/00International: H01L21/283;H01L21/31;H01L21/768Applicant(s) Name: Samsung Electronics Co., Ltd.Address: Inventor(s) Name: Park Chong-Woo;Kim Young-Gi;Park Gan-GonPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract Methods of forming integrated circuit devices include the use of preferred self-aligned contact hole fabrication steps. These steps improve process reliability. A plurality of Read more

Liquid epoxy composite for packaging semiconductor and its application

Application Number: 00123621Application Date: 2000.08.25Publication Number: 1282105Publication Date: 2001.01.31Priority Information: International: C08L63/00;C09K3/10;H01L23/29Applicant(s) Name: Inst. of Chemistry, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Zhonggang;Xie Meiran;Tao ZhiqiangPatent Agency Code: 11021Patent Agent: hu jiaoyuAbstract The present invention discloses a liquid epoxy resin composite for packaging semiconductor, including (by weight portion) 100 portions of liquid epoxy resin, 65-165 Read more

Semiconductor device and mfg. method therefor

Application Number: 00124774Application Date: 2000.09.14Publication Number: 1288258Publication Date: 2001.03.21Priority Information: 1999/9/14 JP 260614/1999International: H01L21/56;H01L21/60Applicant(s) Name: Casio Computer Co., Ltd.Address: Inventor(s) Name: Kuwaraha OsamuPatent Agency Code: 72002Patent Agent: han hongAbstract A sealing film is formed by a screen printing method. In this case, the temperature of the printing table is set at about 30 to 50 Read more

Semiconductor laser and its producing method

Application Number: 00126951Application Date: 2000.09.08Publication Number: 1287397Publication Date: 2001.03.14Priority Information: 1999/9/8 JP 254784/1999International: H01S5/028;H01S5/10Applicant(s) Name: Sony Corp.Address: Inventor(s) Name: Negi KazuhikoPatent Agency Code: 11038Patent Agent: wang sibengAbstract A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends Read more

Semiconductor having themosetting dielectric material and manufacture thereof

Application Number: 00118400Application Date: 2000.06.16Publication Number: 1279251Publication Date: 2001.01.10Priority Information: 1999/6/29 US 09/343,079International: C08J5/04;C08J5/18;H05K1/03Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: D. S. Farkuhar;K. I. Parbethmas;M. D. PerixPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of Read more

Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120218Application Date: 2000.07.13Publication Number: 1334595Publication Date: 2002.02.06Priority Information: International: H01L21/00;H01L21/20;H01L29/04;H01L29/12Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Wang Jun;W.J. Ums;J.A. HolmarkPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A structure of semiconductor incldues silicon substrate, a layer or multi layers of monocrystal oxide. An boundary surface between the silicon substrate and the layer or multi layers Read more

Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof

Application Number: 00121630Application Date: 2000.07.21Publication Number: 1282111Publication Date: 2001.01.31Priority Information: 1999/7/23 JP 209202/1999International: C30B29/38;H01L21/00;H01L33/00Applicant(s) Name: Sony Corp.Address: Inventor(s) Name: Kaai YojiPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AIN and a buffer layer composed Read more

Method for installing semiconductor chip

Application Number: 00122531Application Date: 2000.08.04Publication Number: 1320957Publication Date: 2001.11.07Priority Information: 2000/4/25 JP 124878/2000International: G11B5/00;H01L21/58Applicant(s) Name: Fujitsu Ltd.Address: Inventor(s) Name: Umaba Shunji;Yamaue Takatoyo;Uminuma TsuneoPatent Agency Code: 11038Patent Agent: ma gaoAbstract A method of mounting a semiconductor chip in which an IC chip is mounted by filling a gap between the chip and a substrate with adhesive Read more

Semiconductor storage capable of increasing fetching speed of storage unit

Application Number: 00123768Application Date: 2000.09.05Publication Number: 1287363Publication Date: 2001.03.14Priority Information: 1999/9/6 JP 251399/1999International: G11C17/18;G11C11/413Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Hirata MasayoshiPatent Agency Code: 11219Patent Agent: mu dejunAbstract A semiconductor memory apparatus, includes: a current detecting circuit, an input signal generating circuit, a reference current detecting circuit, a reference input signal generating circuit and a differential Read more

Semiconductor device packaged by resin

Application Number: 00124859Application Date: 2000.09.15Publication Number: 1289147Publication Date: 2001.03.28Priority Information: 2000/6/20 JP 184151/2000; 1999/9/16 JP 261959/1999International: H01L21/60;H01L23/28;H01L23/48Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Nunose Masahiko;Takisawa Tomoko;Honta KoichiPatent Agency Code: 11219Patent Agent: mu dejunAbstract A method for forming a mold-encapsulated semiconductor device includes the steps of mounting a semiconductor chip on a metallic plate having a metallic Read more

Etching insulating layer and mfg. semiconductor device process

Application Number: 00127000Application Date: 2000.09.11Publication Number: 1288253Publication Date: 2001.03.21Priority Information: 1999/9/13 US 09/394,517International: C23F1/10;H01L21/311Applicant(s) Name: Motorola, Inc.Address: Inventor(s) Name: Genithy LagagplanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract Many variations of etches for insulating layers (114, 400, 422, 426) can be used. In one set of embodiments, an insulating layer is etched using an oxide etching Read more

Ice cream maker with semiconductor refrigerator

Application Number: 00118464Application Date: 2000.06.30Publication Number: 1329838Publication Date: 2002.01.09Priority Information: International: A23G9/08;F25B21/02Applicant(s) Name: Qianji Industry Co LtdAddress: Inventor(s) Name: Lao HouanPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract An ice cream maker with semiconductor refrigerator is composed of casing, panel, power switch, refrigerating semiconductor plates, heat sink, cold container, stirring axle, transformer, vortex blades, cold guide Read more

Semiconductor integrated circuit device, its manufacturing method and action method

Application Number: 00120253Application Date: 2000.07.14Publication Number: 1281258Publication Date: 2001.01.24Priority Information: 1999/7/14 JP 200242/1999International: H01L27/04;H01L27/115;H01L21/82;H01L21/824;G11C16/02Applicant(s) Name: Hitachi, Ltd.Address: Inventor(s) Name: Ohayashi Taka;Kurata Hideaki;Ohayashi NaokiPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A semiconductor integrated circuit device improving miniaturization and operation speed and reduces a defect density of an insulator film includes a well formed in a semiconductor Read more

Semiconductor integrated circuit and non-contact information medium with said circuit and driving method

Application Number: 00121638Application Date: 2000.06.01Publication Number: 1280349Publication Date: 2001.01.17Priority Information: 1999/6/2 JP 155009/99; 1999/8/18 JP 231110/99International: G06K19/077Applicant(s) Name: Matsushita Electronic Industry Co., Ltd.Address: Inventor(s) Name: Asada Komei;Nakane Joji;Kaku TatsumiPatent Agency Code: 72001Patent Agent: zhang zhichengAbstract A semiconductor integrated circuit which obtains a driving power from a carrier onto which data has been piggybacked, the semiconductor Read more

Semiconductor device

Application Number: 00122585Application Date: 2000.06.28Publication Number: 1281257Publication Date: 2001.01.24Priority Information: 1999/6/28 JP 181878/1999International: H01L23/522;H01L23/535;H01L21/768;H01L21/60Applicant(s) Name: Toshiba K.K.Address: Inventor(s) Name: Koji HidetoshiPatent Agency Code: 11038Patent Agent: wang sibengAbstract The present invention provides a semiconductor device, which can prevent the alignment mark from being removed in the subsequent steps even if an alignment mark is exposed and Read more

Electronic Beam exposure mask, Exposure method and equipment and method for making semiconductor device

Application Number: 00123809Application Date: 2000.08.18Publication Number: 1285612Publication Date: 2001.02.28Priority Information: 1999/8/19 JP 232358/1999International: G03F7/00;H01L21/027Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Miyasaka MitsumiPatent Agency Code: 11219Patent Agent: mu dejunAbstract An electron beam exposure mask comprises a main mask and one or more compensation masks. The main mask has a plurality of first defined masks. The compensation mask Read more

Optical response semiconductor switch with short circuit load protection

Application Number: 00124965Application Date: 2000.09.27Publication Number: 1292603Publication Date: 2001.04.25Priority Information: 2000/1/26 JP 016410/2000; 1999/9/27 JP 273395/1999International: H03K17/08;H03K17/78Applicant(s) Name: Matsushita Electric Works Ltd.Address: Inventor(s) Name: Tomii Kazuji;Nagahama Hideo;Ogihara YouPatent Agency Code: 11021Patent Agent: chen ruifengAbstract The present invention relates to an improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load Read more

Semiconductor integrated circuit and method for testing characteristics

Application Number: 00127078Application Date: 2000.09.14Publication Number: 1288160Publication Date: 2001.03.21Priority Information: 1999/9/14 JP 260677/99International: G01R31/28;H01L21/66Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Okawa ShinichiPatent Agency Code: 72001Patent Agent: wu zengyongAbstract A semiconductor integrated circuit and a method for measuring the characteristics of a semiconductor integrated circuit are disclosed, which need the minimum test terminals for measuring the characteristics Read more

System and method for monitoring operation failure of stacker for automatic manufacture of semiconductor

Application Number: 00118465Application Date: 2000.06.30Publication Number: 1279423Publication Date: 2001.01.10Priority Information: 1999/6/30 KR 25882/99International: G06F9/00;G06F13/00;G08B21/24;H01L21/00Applicant(s) Name: Hyundai Electronics Industries Co., Ltd.Address: Inventor(s) Name: Lee Chang-Joon;Soo Gyong-chinPatent Agency Code: 11105Patent Agent: huang minAbstract A method for monitoring an operational failure of a stocker for use in a semiconductor factory automation system, wherein the stocker is divided into Read more

Method of making semiconductor structure containing metal oxide interface of silicone

Application Number: 00120254Application Date: 2000.07.14Publication Number: 1281245Publication Date: 2001.01.24Priority Information: 1999/7/15 US 09/354,522International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: MotorolaAddress: Inventor(s) Name: J. Landany;L. Drupard;Yu ZhiyiPatent Agency Code: 11038Patent Agent: du rixinAbstract A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the Read more

Semiconductor device and its mfg. method

Application Number: 00121639Application Date: 2000.06.02Publication Number: 1276630Publication Date: 2000.12.13Priority Information: 1999/6/2 JP 154429/99International: H01L29/786;H01L21/314;H01L21/285Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd.Address: Inventor(s) Name: Sakama Mitsunori;Asami Yuomi;Ishimaru TsunekoPatent Agency Code: 72001Patent Agent: liang yongAbstract An objective is to provide an insulating film suitable for a semiconductor device, typically a TFT, and a method of manufacturing the insulating Read more

Method for producing semiconductor substrate material and solar cells

Application Number: 00122589Application Date: 2000.06.16Publication Number: 1278656Publication Date: 2001.01.03Priority Information: 1999/6/17 JP 171135/1999International: H01L21/02;H01L31/04;H01L31/18Applicant(s) Name: Canon Co., Ltd.Address: Inventor(s) Name: Iwasaki Yukiko;Komehara Takao;Nishita SakajiPatent Agency Code: 11038Patent Agent: wang sibengAbstract When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted Read more

Equipment and method for automatically controlling semiconductor producing technology

Application Number: 00124020Application Date: 2000.05.20Publication Number: 1280324Publication Date: 2001.01.17Priority Information: 1999/5/20 KR 18263/99International: G05B15/02;G06F19/00;H01L21/00Applicant(s) Name: Hyundai Electronics Industries Co., Ltd.Address: Inventor(s) Name: Cho Won-Su;Chang Jin-Ho;Kim Byong-unPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A method for automatically controlling a semiconductor manufacturing process in a semiconductor factory, includes the steps of: a) receiving a lot specification data Read more

Protector for power source of semiconductor laser

Application Number: 00125367Application Date: 2000.09.22Publication Number: 1285637Publication Date: 2001.02.28Priority Information: International: H01S5/00Applicant(s) Name: Shanghai Inst. of Optics and Fine Mechanics, Chinese Academy of SciencesAddress: Inventor(s) Name: Hu Hongwei;Hu QiquanPatent Agency Code: 31002Patent Agent: li lanyangAbstract The present invention relates to a protector for power supply of semiconductor laser, mainly is used for protecting semiconductor laser Read more

Magnetic sensor formed on semiconductor substrate

Application Number: 00118494Application Date: 2000.05.10Publication Number: 1274853Publication Date: 2000.11.29Priority Information: 1999/5/12 EP 99109504.3International: G01R33/04Applicant(s) Name: Asulab S. A.Address: Inventor(s) Name: L. Tschiez;P. KejieckPatent Agency Code: 72001Patent Agent: zhang zhichengAbstract Planar magnetic sensor, made in particular via CMOS techniques on a semiconductor substrate (1) of for example parallelepiped shape. It includes an amorphous ferromagnetic core (10) Read more

Method of manufacturing semiconductor structure for lowering leackage current density

Application Number: 00120255Application Date: 2000.07.14Publication Number: 1281246Publication Date: 2001.01.24Priority Information: 1999/7/15 US 09/354,173International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: Motorola, Inc.Address: Inventor(s) Name: L. Drupard;Yu Zhiyi;J. LandanyPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed Read more

Semiconductor integrated circuit and checking method, crystal device and electronic device

Application Number: 00121735Application Date: 2000.07.24Publication Number: 1282108Publication Date: 2001.01.31Priority Information: 2000/6/7 JP 170271/00; 1999/7/23 JP 209314/99International: G01R31/28;G02F1/133;H01L21/66;H01L27/02Applicant(s) Name: Seiko Epson Corp.Address: Inventor(s) Name: Aoki Shigeki;Uejo HaruoPatent Agency Code: 72001Patent Agent: yang kaiAbstract A semiconductor integrated circuit can change the pulse width of a reset signal for initializing the latch output, in which the pulse width Read more

Package uith for semiconductor device and its manufacture

Application Number: 00122612Application Date: 2000.08.04Publication Number: 1337743Publication Date: 2002.02.27Priority Information: International: H01L21/60;H01L23/495;H01L23/50;H01L25/04Applicant(s) Name: Taiwan Common Equipment Co., Ltd.Address: Inventor(s) Name: Chen Shiguan;Xu Zhenglu;Lin GuanghanPatent Agency Code: 72002Patent Agent: li shumengAbstract The present invnetion relates to a packaging and assembling equipment for semiconductor device and its manufacturing method. It is packaging and assembling equipment incldues: a Read more

Semiconductor factory automation system and method for processing semiconductor wafer cartridge

Application Number: 00124022Application Date: 2000.06.22Publication Number: 1280323Publication Date: 2001.01.17Priority Information: 1999/6/22 KR 23539/99; 1999/6/22 KR 23540/99; 1999/6/28 KR 24872/99; 1999/7/14 KR 28417/99International: G05B15/00;G06F19/00;H01L21/00Applicant(s) Name: Hyundai Electronics Industries Co., Ltd.Address: Inventor(s) Name: Kang Choi-Chu;Ha Song-Hai;Park Gyong-sokPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A method for processing semiconductor wafer cassette in a semiconductor factory automation system, wherein Read more