Tag Archives: silicon-base

Silicon-base dual potential barrier structure tunnel tuminous diode and its manufacture method

Application Number: 00112046Application Date: 2000.01.24Publication Number: 1260600Publication Date: 2000.07.19Priority Information: International: H01L33/00Applicant(s) Name: Dongnan UniversityAddress: Inventor(s) Name: Wang Maoxiang;Sun Chengxiu;Yu JianhuaPatent Agency Code: 32200Patent Agent: shen lianAbstract The tunneluminescent diode is characterized by that a silicon chip is used as substrate, on the upper surface of silicon chip there is a layer of phosphorus diffusion… Read More »

Manufacture of lead accumulator modified by nanometer silicon-base oxide

Application Number: 00122188Application Date: 2000.08.04Publication Number: 1337751Publication Date: 2002.02.27Priority Information: International: H01M4/20;H01M4/68Applicant(s) Name: Zhoushan Mingri Nanometer Techn Co., Ltd.Address: Inventor(s) Name: Huang Hai;Liu Jingchun;Guan JunzhengPatent Agency Code: 33100Patent Agent: ma shilinAbstract The present invention discloses a method for producing lead accumulator (plate) by using nanometer silicon base oxide. Said lead accumulator plate is a paste-coated… Read More »

Organic silicon/epoxy resin packing material modified with nanometer-level silicon-base oxide

Application Number: 00108814Application Date: 2000.05.10Publication Number: 1270979Publication Date: 2000.10.25Priority Information: International: C08K9/02;C08L63/00;C09K3/10Applicant(s) Name: Jilin Univ.Address: Inventor(s) Name: Fang Kun;Zhao Yi;Huang JinsongPatent Agency Code: 22201Patent Agent: zhang jinglinAbstract The present invention relates to a room temperature cured single-component organic silicon/epoxy resin encapsulating material after being activization-treated and modified with nanometer SiO2-x. The said encapsulating material contains… Read More »