Tag Archives: (SOI)

SOI semiconductor integrated circuit for eliminating floater effect and mfg. method thereof

Application Number  00128891 Application Date  2000.09.28 Publication Number  1300102 Publication Date  2001.06.20 Priority Information   1999/10/25 US 60/161,479   International Classification  H01L27/12;H01L21/84   Applicant(s) Name  Samsung Electronics Co. Ltd.   Address     Inventor(s) Name  Kim Yong-Ul;Kim Byong-Sun;Kang Hvi-Seung   Patent Agency Code  11105 Patent Agent  tao fengbei AbstractA silicon-on-insulator (SOI) integrated circuit and a… Read More »

Method for eliminating boundary stress in upper silicone (SOI) on insulating layer formed by local oxygen injection

Application Number: 00115306Application Date: 2000.03.30Publication Number: 1272690Publication Date: 2000.11.08Priority Information: International: H01L21/324;H01L21/76Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Lianwei;Lin Chenglu;Duo XinzhongPatent Agency Code: 31002Patent Agent: pan zhensuAbstract The present invention provides a method for eliminating boundary stress in silicon (SOI) material on the insulating layer formed by adopting local… Read More »

Technology for making device with silicon (SOI) circuit on insulating layer by low-dosage oxygen injection

Application Number: 00115501Application Date: 2000.04.27Publication Number: 1279505Publication Date: 2001.01.10Priority Information: International: H01L21/265;H01L21/314;H01L21/324Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Lianwei;Li Chenglu;Zhang MiaoPatent Agency Code: 31002Patent Agent: pan zhensuAbstract A technology for making the silicon-on-insulating (SOI) circuit by low-dosage oxygen injection includes such steps as low-dosage oxygen injection of (4-6)X10 to… Read More »