Tag Archives: transistors

Technology for manufacturing flat display with film transistors

Application Number  00128493 Application Date  2000.11.24 Publication Number  1355561 Publication Date  2002.06.26 Priority Information     International Classification  G02F1/136;H01L21/84   Applicant(s) Name  Daqi Science and Technology Co Ltd   Address     Inventor(s) Name  Weng Jiapan   Patent Agency Code  11105 Patent Agent  chen xiaowen AbstractA technology for preparing flat display with thin-film transistors includes… Read More »

Bidirectional switch control system adoption of two transistors

Application Number: 00124095Application Date: 2000.08.21Publication Number: 1285657Publication Date: 2001.02.28Priority Information: 1999/8/20 CH 1530/99International: H02H3/08;H03K17/687Applicant(s) Name: EM Microelectronic-Marin SAAddress: Inventor(s) Name: M. Bruhart;S. TeliratePatent Agency Code: 72001Patent Agent: wu zengyongAbstract A control system for a bidirectional switch (20) is described, formed of a pair of MOFSET power transistors (210, 220) connected in anti-series, i.e. source to… Read More »

Device and method for detecting overheated power transistors of phase inverter

Application Number: 00124707Application Date: 2000.09.13Publication Number: 1290058Publication Date: 2001.04.04Priority Information: 1999/9/28 KR 1999-41599; 2000/8/21 KR 2000-48304International: H02H7/122Applicant(s) Name: Samsung Electronics Co., Ltd.Address: Inventor(s) Name: Lee Tong-GyuPatent Agency Code: 11021Patent Agent: jiang lilouAbstract Disclosed is an apparatus and a method for detecting overheat of a power transistor. The apparatus comprises a resistor provided on a current… Read More »

Twin film field effect transistors and use thereof

Application Number: 00108220Application Date: 2000.04.30Publication Number: 1279517Publication Date: 2001.01.10Priority Information: 1999/5/18 US 09/314,436International: H01L21/28;H01L21/336;H01L27/00;H01L29/786Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: T. Doder;Huang Wei;C. C. ChoiPatent Agency Code: 11038Patent Agent: du rixinAbstract A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive… Read More »