Technology for manufacturing electronic elements of thin-film transistor display

Application Number: 00126054
Application Date: 2000.08.29
Publication Number: 1340847
Publication Date: 2002.03.20
Priority Information:
International: G02F1/136;G09F9/30;H01L21/00;H01L29/786
Applicant(s) Name: Daqi Science and Technology Co Ltd
Address:
Inventor(s) Name: Weng Jiapan
Patent Agency Code: 11105
Patent Agent: tao fengbei
Abstract A technology for making the thin-film transistor display includes such steps as depositing a first metal layer on the surface of substrate, limiting a pattern to generate a grid electrode and a pad electrode, sequentially generating insulating layer, semiconductor layer and conductive doped silicon layer, limiting an opening area on the connecting pad, removing the insulating layer, semiconductor layer and conductive doped silicon layer beyond the transistor area and connecting pad area, depositing a second metal layer, limiting the pattern of the second metal layer, and limiting the pattern of conducting doped silicon layer.