Vertical dynamic storage unit with word line self aligning to storage groove

Application Number: 00122475
Application Date: 2000.08.02
Publication Number: 1304177
Publication Date: 2001.07.18
Priority Information: 1999/8/16 US 09/374,687
International: H01L21/8242;H01L27/108
Applicant(s) Name: International Business Machine Corp.
Address:
Inventor(s) Name: Tosheharu. Furukawa;Orlack. Gruenin;David. Holake
Patent Agency Code: 11038
Patent Agent: fu jianjun
Abstract A dynamic random access memory (DRAM) device. The DRAM device is formed in a substrate having a top surface and a trench with a sidewall formed in the substrate. A signal storage node is formed using a bottom portion of the trench and a signal transfer device is formed using an upper portion of the trench. The signal transfer device can reduce the resistance and capacitance of the word line, thereby a better performance of the dynamic random access memory is obtained.